The Ion Beam department is in charge of the maintenance, operation and development of the IP2I particle gas pedals.
Ion beams are used by various scientific teams in the laboratory. Depending on their energy and nature, these beams can be used to pulverize matter, analyze an atomic composition, implant ions into materials or test their behavior under the effect of certain radiations (modification of the chemical structure, degradation…). These activities are carried out at IP2I in collaboration with the research teams Nuclear energy, Nanodroplets.

In addition to research activities, we maintain and develop beamlines and equipment associated with particle gas pedals. We also ensure the development and design of beam acceleration platforms to meet the future needs of IP2I research groups or national projects.

The Ion Beam department also makes its facilities available for teaching purposes and public visits.

The IP2I has 3 particle accelerators :

  • A Van De Graaf 4 MV type electrostatic accelerator with several beam paths for ion beam analysis and irradiation.
  • A 400 kV electrostatic accelerator for ion implantation (IMIO400).
  • A complex of accelerators dedicated to the research work of the IPM group on which the department has technical responsibility for maintenance and development.

Ion beam analysis of samples

These analyses are done at the different beam paths of the Van de Graaff 4 MV. The analysis techniques used (RBS, PIXE, ERDA, Nuclear Reaction Analysis) allow to characterize the composition of the samples.

Ion implantation

Ion implantation consists of inserting a certain amount of material into any sample at a chosen depth. This depth depends on the physico-chemical properties of the material but also on the energy of the accelerated ions and their electrical charge.

Thus, the 400 kV implanter makes it possible to implant a wide variety of ions at an energy that varies from 5 MeV to 5 MeV depending on the charge. The installation ranges from 60 keV to 800 keV depending on the ions. An electrostatic scanning device allows sample areas of up to 80 cm².

The Van de Graaff 4 MV gas pedal allows the implantation of ions (proton, helium deuton) from 0.9 to 7.tion. An electrostatic scanning device allows the simultaneous and homogeneous implantation of a maximum surface of about 6 cm2.

In both cases, the implanted dose is generally between 1.1012 and 1.1017 ions/cm².

Support for experiments on our machines

We provide technical assistance to research groups operating on our beamlines in various fields: vacuum, electromechanics, electronics, mechanics…
This has recently resulted in the realization of a multi-analysis chamber on the Van de Graaff 4 MV or the Radiograaff biological irradiation line.

Study and development of ion acceleration platforms

We are participating in the design of the Ganil Spiral2 ion source.

Renovation of the installations; upgrading to safety standards

All the members of the department participate in the renovation of the machines as well as in their compliance, particularly in terms of safety. We are subject to ASN authorization.

Thus, we realized the automation of the Van de Graaff 4 MV and its beam paths.
On IMIO400, the control-command has been completely rethought and a new automated implantation chamber is being installed.

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